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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION With TO-3PML package Complement to type 2SA1908 APPLICATIONS Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 6 Emitter-base voltage Open collector Collector current 8 Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 3 75 150 -55~150 UNIT V V V A A W ae ae 1 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=3 A;IB=0.3 A VCB=160V ;IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 MIN 120 2SC5100 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 0.5 10 10 180 |I |I V A A MHz pF 200 Switching times ton ts tf hFE classifications O 50-100 P 70-140 TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 0.13 |I IC=4A;RL=10| IB1=-IB2=0.4A VCC=40V 3.50 Fall time 0.32 |I s |I s s Y 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5100 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5100 TOR NDU ICO E SEM ANG INCH 4 |
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